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Communication base station

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Application Overview

The communication technology market is developing rapidly, summarizing the development of new chip components, focusing on the miniaturization, high frequency and precision technology of components, and the application and development of mobile communication systems such as smart phones, GPS, W-LAN, and Bluetooth.

Communication base station

High power resistance
- UR Low resistance low TC high power thick film chip resistor
  
  Series：UR
  Power (W)：1/8W~1W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：pls see detail in datasheet
- CH Low resistance high power thick film chip resistor
  
  Series：CH
  Power (W)：1/10W~2W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.05Ω~1Ω
- CH High power thick film chip resistor
  
  Series：CH
  Power (W)：1/10W~2W
  Specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：1Ω~10MΩ
Chip Thick Film Resistor
- RC High voltage thick film chip resistor
  
  Series：RC
  Power (W)：1/10W~1/4W
  Specification：0603（1608） 0805（2012） 1206（3216）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：47Ω~10MΩ
- RL Thick film chip resistors with low temperature coefficient
  
  Series：RL
  Power (W)：1/20W~1W
  Specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5%1% 5%
  Block：1Ω~1MΩ
- CR LED Thick Film Chip Resistor
  
  Series：CR
  Power (W)：1/8W~1/4W
  Specification：0805（2012） 1206（3216）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 2% 5%
  Block：1Ω~10MΩ
- CA Thick film patch exclusion-convex electrode
  
  Series：CA
  Power (W)：1/16W~1/10W
  Specification：CA024A CA034A
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：1Ω~1MΩ
- CR Low resistance thick film chip resistors
  
  Series：CR
  Power (W)：1/16W~1W
  Specification：0402~2512
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.02Ω~1Ω
- PF Lead-free thick film chip resistors
  
  Series：PF
  Power (W)：1/20W~1W
  Specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5%1% 2% 5%
  Block：1Ω~22MΩ
- CR Thick film chip resistor
  
  Series：CR
  Power (W)：1/20W~1W
  Specification：01005（0402） 0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5% 1% 5%
  Block：1Ω~100MΩ
Alloy foil chip resistor
- RA Alloy foil chip resistor
  
  Series：RA
  Power (W)：1/8W
  Specification：0201（0603）
  Temperature Coefficient：±150ppm/℃
  Accuracy：1% 2% 5%
  Block：3mΩ~4mΩ
Alloy chip resistor
- RM Alloy chip resistor
  
  Series：RM
  Power (W)：1W
  Specification：2512（6432）
  Temperature Coefficient：±50ppm/℃
  Accuracy：1% 2% 5%
  Block：1mΩ~50mΩ
Low resistance low TC high power thick film chip resistor
- UR Low resistance low TC high power thick film chip resistor
  
  Series：UR
  Power (W)：1W
  Specification：2512（6432）
  Temperature Coefficient：±250ppm/℃ ±100ppm/℃
  Accuracy：1% 5%
  Block：0.010Ω~0.030Ω 0.033Ω~0.910Ω
Low resistance high power thick film resistor
- CH Low resistance high power thick film resistor
  
  Series：CH
  Power (W)：1/8W
  Specification：0603（1608）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.05Ω~1Ω(不含)
Low resistance thick film chip resistors
- CR Low resistance thick film chip resistors
  
  Series：CR
  Power (W)：1/16W
  Specification：0402（1005）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：1% 5%
  Block：0.025Ω~1Ω
Thin Film Chip Resistor
- TR Thin Film Chip Resistor
  
  Series：TR
  Power (W)：1/16W~2W
  Specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（3225） 2010（5025） 2512（6432）
  Temperature Coefficient：pls see detail in datasheet
  Accuracy：0.1% 0.5% 1% 2% 5%
  Block：pls see detail in datasheet
Chip Zener Diode
- 1 CDZ55B
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55B-S
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55B-T
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C-S
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：2.4V~75V (2.4Vonly 5%）
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：Depending on voltage
- 1 CDZ55C-M
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
- 1 CDZ55C-SM
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
- 1 CDZ55C-TM
  
  Number of channels：1
  Spilled power mW：mW
  Repeated recovery current：200
  Forward voltage V：V(Max.)
  Zener voltage range：5.1V~5.6V
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：5
  Maximum Zener impedance (Ω)：Depending on voltage
  Maximum Zener impedance (mA)：1
  Maximum reverse leakage current (uA))：<100
Switching diode
- 75 CD4148WQR
  
  Maximum reverse voltage (V)：75
  Average rectified forward current (A)：0.15
  Forward voltage (V)：1 @ IF=50mA
  Reverse current (uA)：0.025 @ VR=20V 2.5 @ VR=75V
  Package：DFN1006-2
- 30 CD4448WQR
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.46 @ IF=10mA
  Reverse current (uA)：0.3 @ VR=10V
  Package：DFN1006-2
Schottky diodes
- 30 CDB0130KRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.37 @ IF=10mA
  Reverse current (uA)：7 @ VR=10V
  Package：DFN0603-2
- 30 CDB0130KRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.46 @ IF=10mA
  Reverse current (uA)：0.3 @ VR=10V
  Package：DFN0603-2
- 30 CDB0130QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.29 @ IF=10mA 0.30 @ IF=20mA 0.40 @ IF=100mA
  Reverse current (uA)：30 @ VR=30V
  Package：DFN1006-2
- 30 CDB0130QRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.51 @ IF=100mA
  Reverse current (uA)：1 @ VR=10V
  Package：DFN1006-2
- 40 CDB0140QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.34 @ IF=10mA 0.55 @ IF=100mA
  Reverse current (uA)：10 @ VR=10V 40 @ VR=40V
  Package：DFN1006-2
- 40 CDB0140QRM
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.1
  Forward voltage (V)：0.36 @ IF=10mA 0.51 @ IF=100mA
  Reverse current (uA)：1 @ VR=10V 5 @ VR=40V
  Package：DFN1006-2
- 30 CDB0230QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.50 @ IF=200mA
  Reverse current (uA)：10 @ VR=10V
  Package：DFN1006-2
- 30 CDB0230QRM
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.60 @ IF=200mA
  Reverse current (uA)：1 @ VR=10V
  Package：DFN1006-2
- 40 CDB0240QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.33 @ IF=10mA 0.52 @ IF=200mA
  Reverse current (uA)：10 @ VR=10V 40 @ VR=40V
  Package：DFN1006-2
- 40 CDB0240QRM
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.2
  Forward voltage (V)：0.36 @ IF=10mA 0.60 @ IF=200mA
  Reverse current (uA)：1 @ VR=10V 5 @ VR=40V
  Package：DFN1006-2
- 20 CDB0520QRL
  
  Maximum reverse voltage (V)：20
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 30 @ VR=20V
  Package：DFN1006-2
- 30 CDB0530QRL
  
  Maximum reverse voltage (V)：30
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 40 @ VR=30V
  Package：DFN1006-2
- 40 CDB0540QRL
  
  Maximum reverse voltage (V)：40
  Average rectified forward current (A)：0.5
  Forward voltage (V)：0.27 @ IF=10mA 0.46 @ IF=500mA
  Reverse current (uA)：20 @ VR=10V 50 @ VR=40V
  Package：DFN1006-2
Antistatic surge diode
- 1 ESDKR5V0BS
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：5.6
  Leakage current (nA)：10
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：3.5
  Clamping voltage (V) tp = 8/20 μs：3.5
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN0603-2
- 1 ESDKR5V0UJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±19
  Antistatic ability (gap) (kV)：±19
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 15 @IPP=2A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.6
  Package：DFN0603-2
- 1 ESDQR3V3B
  
  Number of channels：1
  Starting voltage (V)：3.3
  Breakdown voltage (V)：3.5
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：15
  Clamping voltage (V) tp = 8/20 μs：6.0 @IPP=1A 12 @IPP=15A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR3V3BS
  
  Number of channels：1
  Starting voltage (V)：3.3
  Breakdown voltage (V)：4
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±20
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：5.5 @IPP=1A 8.0 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN1006-2
- 1 ESDQR5V0B
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：7.9
  Clamping voltage (V) tp = 8/20 μs：9.0 @IPP=1A 17.5 @IPP=7.9A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：20
  Package：DFN1006-2
- 1 ESDQR5V0BJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：14 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.6
  Package：DFN1006-2
- 1 ESDQR5V0BS
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 17 @IPP=2A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：10
  Package：DFN1006-2
- 1 ESDQR5V0BX
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：2
  Clamping voltage (V) tp = 8/20 μs：14 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.3
  Package：DFN1006-2
- 1 ESDQR5V0U
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：10
  Clamping voltage (V) tp = 8/20 μs：13.5 @IPP=10A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：80
  Package：DFN1006-2
- 1 ESDQR5V0UJ
  
  Number of channels：1
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±18
  Antistatic ability (gap) (kV)：±20
  Maximum peak pulse current (A) tp = 8/20 μs：3.6
  Clamping voltage (V) tp = 8/20 μs：12 @IPP=1A 20 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.5
  Package：DFN1006-2
- 1 ESDQR12V0B
  
  Number of channels：1
  Starting voltage (V)：12
  Breakdown voltage (V)：14.6
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±16
  Maximum peak pulse current (A) tp = 8/20 μs：6
  Clamping voltage (V) tp = 8/20 μs：19 @IPP=1A 25 @IPP=6A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR12V0U
  
  Number of channels：1
  Starting voltage (V)：12
  Breakdown voltage (V)：13.3
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±30
  Antistatic ability (gap) (kV)：±30
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：19 @IPP=1A 24 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：60
  Package：DFN1006-2
- 1 ESDQR24V0B
  
  Number of channels：1
  Starting voltage (V)：24
  Breakdown voltage (V)：26.5
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：3
  Clamping voltage (V) tp = 8/20 μs：36 @IPP=1A 42 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 1 ESDQR24V0U
  
  Number of channels：1
  Starting voltage (V)：24
  Breakdown voltage (V)：26.5
  Leakage current (nA)：50
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：3
  Clamping voltage (V) tp = 8/20 μs：36 @IPP=1A 42 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：35
  Package：DFN1006-2
- 1 ESDQR36V0B
  
  Number of channels：1
  Starting voltage (V)：36
  Breakdown voltage (V)：40
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：1.5
  Clamping voltage (V) tp = 8/20 μs：58 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：20
  Package：DFN1006-2
- 1 ESDQR36V0U
  
  Number of channels：1
  Starting voltage (V)：36
  Breakdown voltage (V)：40
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±25
  Antistatic ability (gap) (kV)：±25
  Maximum peak pulse current (A) tp = 8/20 μs：1.5
  Clamping voltage (V) tp = 8/20 μs：58 @IPP=1A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：30
  Package：DFN1006-2
- 4 RESDMRA3V3J
  
  Number of channels：4
  Starting voltage (V)：3.3
  Breakdown voltage (V)：3.4
  Leakage current (nA)：100
  Antistatic ability (contact) (kV)：±8
  Antistatic ability (gap) (kV)：±15
  Maximum peak pulse current (A) tp = 8/20 μs：4
  Clamping voltage (V) tp = 8/20 μs：8 @IPP=1A 10 @IPP=3A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.65
  Package：DFN2510-10
- 4 RESDMRA5V0J
  
  Number of channels：4
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±17
  Maximum peak pulse current (A) tp = 8/20 μs：5
  Clamping voltage (V) tp = 8/20 μs：15 @IPP=1A 25 @IPP=5A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.8
  Package：DFN2510-10
- 4 RESDMRA5V0X
  
  Number of channels：4
  Starting voltage (V)：5
  Breakdown voltage (V)：6
  Leakage current (nA)：1000
  Antistatic ability (contact) (kV)：±12
  Antistatic ability (gap) (kV)：±17
  Maximum peak pulse current (A) tp = 8/20 μs：3.4
  Clamping voltage (V) tp = 8/20 μs：15 @IPP=1A 25 @IPP=3.4A
  Capacitance (pF) I/O-GND VR=0V, f=1MHz：0.4
  Package：DFN2510-10